A comparative experimental study is presented of the ion-beam and the laser long-range gettering in GaAs MESFETs using an n+nn–structure. It is shown that the similarity of the two processes results from the fact that both of them depend on the modification of the interfaces by elastic waves generated in the structure. It is demonstrated that the laser irradiation of quasi-ballistic MESFETs pretreated with neutrons allows one to create a system of radiation-induced channel defects that improves the performance of the device.
Russian Microelectronics – Springer Journals
Published: Oct 18, 2004
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