Compact mole fraction-dependent modeling of I-V and C-V characteristics in Al $$_{x}$$ x Ga $$_{1-x}$$ 1 - x N/GaN HEMTs

Compact mole fraction-dependent modeling of I-V and C-V characteristics in Al $$_{x}$$ x... In this paper we present a compact mole fraction-dependent modeling of the I-V and C-V characteristics in Al $$_{x}$$ x Ga $$_{1-x}$$ 1 - x N/GaN HEMTs using Atlas TCAD. The C-V characteristics of the Al $$_{x}$$ x Ga $$_{1-x}$$ 1 - x N/GaN HEMTs are obtained using a charge conserving model. Based on this modeling, we have developed an analytical model for the threshold voltage, the carrier sheet density, the drain current, and the capacitance. The model covers all the different operating regimes of the device. The model includes the Al mole fraction of the barrier layer effects and was incorporated into our previously developed charge based on I-V and C-V characteristics, and we also simulated the device transconductance of Al $$_{x}$$ x Ga $$_{1-x}$$ 1 - x N/GaN HEMTs. The results of the modeled I-V and C-V characteristics are in excellent agreement with the simulated data obtained by the Atlas TCAD simulator, which demonstrates the validity of the proposed model. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Computational Electronics Springer Journals

Compact mole fraction-dependent modeling of I-V and C-V characteristics in Al $$_{x}$$ x Ga $$_{1-x}$$ 1 - x N/GaN HEMTs

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Publisher
Springer Journals
Copyright
Copyright © 2017 by Springer Science+Business Media, LLC
Subject
Engineering; Mathematical and Computational Engineering; Electrical Engineering; Theoretical, Mathematical and Computational Physics; Optical and Electronic Materials; Mechanical Engineering
ISSN
1569-8025
eISSN
1572-8137
D.O.I.
10.1007/s10825-017-1067-7
Publisher site
See Article on Publisher Site

Abstract

In this paper we present a compact mole fraction-dependent modeling of the I-V and C-V characteristics in Al $$_{x}$$ x Ga $$_{1-x}$$ 1 - x N/GaN HEMTs using Atlas TCAD. The C-V characteristics of the Al $$_{x}$$ x Ga $$_{1-x}$$ 1 - x N/GaN HEMTs are obtained using a charge conserving model. Based on this modeling, we have developed an analytical model for the threshold voltage, the carrier sheet density, the drain current, and the capacitance. The model covers all the different operating regimes of the device. The model includes the Al mole fraction of the barrier layer effects and was incorporated into our previously developed charge based on I-V and C-V characteristics, and we also simulated the device transconductance of Al $$_{x}$$ x Ga $$_{1-x}$$ 1 - x N/GaN HEMTs. The results of the modeled I-V and C-V characteristics are in excellent agreement with the simulated data obtained by the Atlas TCAD simulator, which demonstrates the validity of the proposed model.

Journal

Journal of Computational ElectronicsSpringer Journals

Published: Sep 19, 2017

References

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