Chemical Vapor Deposition of Silicon Oxynitride Films onto Silicon by the Pyrolysis of Hexamethyl Disilazane with Nitrogen-Containing Additives

Chemical Vapor Deposition of Silicon Oxynitride Films onto Silicon by the Pyrolysis of Hexamethyl... The chemical vapor deposition onto silicon substrates by the thermal decomposition of hexamethyl disilazane (HMDS) is studied experimentally. In addition to HMDS, the gas mixture contains argon and one or two additives, which may be N2O, NH3, O2, or H2O. The growth rate, composition, and electrical properties of films produced are analyzed, and a relationship between them and the type of gas mixture employed is revealed. A possible mechanism of deposition is proposed for the case where N2O or N2O + NH3serves as the additive. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Chemical Vapor Deposition of Silicon Oxynitride Films onto Silicon by the Pyrolysis of Hexamethyl Disilazane with Nitrogen-Containing Additives

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2001 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1013800921927
Publisher site
See Article on Publisher Site

Abstract

The chemical vapor deposition onto silicon substrates by the thermal decomposition of hexamethyl disilazane (HMDS) is studied experimentally. In addition to HMDS, the gas mixture contains argon and one or two additives, which may be N2O, NH3, O2, or H2O. The growth rate, composition, and electrical properties of films produced are analyzed, and a relationship between them and the type of gas mixture employed is revealed. A possible mechanism of deposition is proposed for the case where N2O or N2O + NH3serves as the additive.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 13, 2004

References

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