The chemical vapor deposition onto silicon substrates by the thermal decomposition of hexamethyl disilazane (HMDS) is studied experimentally. In addition to HMDS, the gas mixture contains argon and one or two additives, which may be N2O, NH3, O2, or H2O. The growth rate, composition, and electrical properties of films produced are analyzed, and a relationship between them and the type of gas mixture employed is revealed. A possible mechanism of deposition is proposed for the case where N2O or N2O + NH3serves as the additive.
Russian Microelectronics – Springer Journals
Published: Oct 13, 2004
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