Chemical nanotechnology of oxide and nitride low-dimensional structures on a semiconductor matrix

Chemical nanotechnology of oxide and nitride low-dimensional structures on a semiconductor matrix The results of the quantitative approach for assessing the activity of solid surface from the values of inductive constants during the implementation processes of molecular layering (atomic layer deposition) on semiconductor matrixes are presented. For example, features of synthesis of oxide and nitride surface nanostructures on silicon show the possibility of the proposed approach to optimize the conditions of their formation and further development of chemical nanotechnology of low-dimensional systems. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Chemical nanotechnology of oxide and nitride low-dimensional structures on a semiconductor matrix

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2010 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739710030054
Publisher site
See Article on Publisher Site

Abstract

The results of the quantitative approach for assessing the activity of solid surface from the values of inductive constants during the implementation processes of molecular layering (atomic layer deposition) on semiconductor matrixes are presented. For example, features of synthesis of oxide and nitride surface nanostructures on silicon show the possibility of the proposed approach to optimize the conditions of their formation and further development of chemical nanotechnology of low-dimensional systems.

Journal

Russian MicroelectronicsSpringer Journals

Published: May 20, 2010

References

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