Hard-inert materials such as diamond, silicon carbide, gallium nitride, and sapphire are difficult to obtain from the smooth and damage-free surfaces efficiently required by semiconductor field. Therefore, this study proposed a chemical kinetics model to evaluate the material removal rate of diamond in chemical mechanical polishing process and to investigate the material removal mechanism by examining the surface information with optical microscopy, surface profilometry, and atomic force microscopy as well as X-ray photoelectron spectroscopy. The theoretical and experimental results show that chemical and mechanical synergic effect may promote the diamond oxidation reaction in chemical kinetics. The material removal rate is acceptable when the mechanical activation coefficient is smaller than 0.48. The 2.5 μm B4C abrasives, the polishing temperature of 50 °C, and the polishing pressure of 266.7 MPa are optimal parameters for diamond polishing with potassium ferrate slurry. It provides the highest material removal rate of 0.055 mg/h, the best surface finish (about Ra 0.5 nm) and surface quality (no surface scratches or pits). It then discusses how mechanical stress may promote the chemical oxidation of oxidant and diamond by forming “C-O,” “C=O,” and “O=C-OH” on diamond surface. The study concludes that chemical kinetics mechanism is effective for the investigation of the synergic effect in chemical mechanical polishing hard-inert materials.
The International Journal of Advanced Manufacturing Technology – Springer Journals
Published: Nov 13, 2017
It’s your single place to instantly
discover and read the research
that matters to you.
Enjoy affordable access to
over 12 million articles from more than
10,000 peer-reviewed journals.
All for just $49/month
It’s easy to organize your research with our built-in tools.
All the latest content is available, no embargo periods.
“Whoa! It’s like Spotify but for academic articles.”@Phil_Robichaud