Chemical interaction of InAs, InSb, GaAs, and GaSb with (NH4)2Cr2O7–HBr–C4H6O6 etching solutions

Chemical interaction of InAs, InSb, GaAs, and GaSb with (NH4)2Cr2O7–HBr–C4H6O6 etching solutions This paper presents results on the kinetics and mechanism of the physicochemical interaction of InAs, InSb, GaAs, and GaSb semiconductor surfaces with (NH4)2Cr2O7–HBr–C4H6O6 etching solutions under reproducible hydrodynamic conditions in the case of laminar etchant flow over a substrate. We have identified regions of polishing and nonpolishing solutions and evaluated the apparent activation energy of the process. The surface morphology of the crystals has been examined by microstructural analysis after chemical etching. The results demonstrate that the presence of C4H6O6 in etchants helps to reduce the overall reaction rate and extend the region of polishing solutions. Inorganic Materials Springer Journals

Chemical interaction of InAs, InSb, GaAs, and GaSb with (NH4)2Cr2O7–HBr–C4H6O6 etching solutions

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Pleiades Publishing
Copyright © 2017 by Pleiades Publishing, Ltd.
Chemistry; Inorganic Chemistry; Industrial Chemistry/Chemical Engineering; Materials Science, general
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