Chemical interaction of InAs, InSb, GaAs, and GaSb with (NH4)2Cr2O7–HBr–C4H6O6 etching solutions

Chemical interaction of InAs, InSb, GaAs, and GaSb with (NH4)2Cr2O7–HBr–C4H6O6 etching solutions This paper presents results on the kinetics and mechanism of the physicochemical interaction of InAs, InSb, GaAs, and GaSb semiconductor surfaces with (NH4)2Cr2O7–HBr–C4H6O6 etching solutions under reproducible hydrodynamic conditions in the case of laminar etchant flow over a substrate. We have identified regions of polishing and nonpolishing solutions and evaluated the apparent activation energy of the process. The surface morphology of the crystals has been examined by microstructural analysis after chemical etching. The results demonstrate that the presence of C4H6O6 in etchants helps to reduce the overall reaction rate and extend the region of polishing solutions. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Inorganic Materials Springer Journals

Chemical interaction of InAs, InSb, GaAs, and GaSb with (NH4)2Cr2O7–HBr–C4H6O6 etching solutions

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Publisher
Pleiades Publishing
Copyright
Copyright © 2017 by Pleiades Publishing, Ltd.
Subject
Chemistry; Inorganic Chemistry; Industrial Chemistry/Chemical Engineering; Materials Science, general
ISSN
0020-1685
eISSN
1608-3172
D.O.I.
10.1134/S0020168517080118
Publisher site
See Article on Publisher Site

Abstract

This paper presents results on the kinetics and mechanism of the physicochemical interaction of InAs, InSb, GaAs, and GaSb semiconductor surfaces with (NH4)2Cr2O7–HBr–C4H6O6 etching solutions under reproducible hydrodynamic conditions in the case of laminar etchant flow over a substrate. We have identified regions of polishing and nonpolishing solutions and evaluated the apparent activation energy of the process. The surface morphology of the crystals has been examined by microstructural analysis after chemical etching. The results demonstrate that the presence of C4H6O6 in etchants helps to reduce the overall reaction rate and extend the region of polishing solutions.

Journal

Inorganic MaterialsSpringer Journals

Published: Aug 20, 2017

References

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