The mechanism responsible for the charge transport in thin ferroelectric Hf0.5Zr0.5O2 films has been studied. It is shown that in these films the transport mechanism is phonon-assisted tunneling between the traps. The optimal thickness of dielectric film for TiN/Hf0.5Zr0.5O2/Pt structures is determined. As a result of comparing the experimental current–voltage (I–V) characteristics of TiN/Hf0.5Zr0.5O2/Pt structures with the calculated ones, the thermal and optical energies of the traps are determined and the concentration of the traps is estimated. A comparison between the transport properties of ferroelectric and amorphous Hf0.5Zr0.5O2 films is carried out. It is shown that the charge transport mechanism in this dielectric does not depend on its crystalline phase. A method for decreasing leakage currents in Hf0.5Zr0.5O2 is proposed. A study of the resource of repolarization cycles for TiN/Hf0.5Zr0.5O2/TiN metal-dielectric-metal (MDM) structures fully grown by atomic layer deposition (ALD) has been carried out.
Russian Microelectronics – Springer Journals
Published: Sep 16, 2016
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