Characterization of Selectively Doped InAs-Quantum-Dot GaAs-Based Multilayer Heterostructures by High-Resolution X-ray Diffraction

Characterization of Selectively Doped InAs-Quantum-Dot GaAs-Based Multilayer Heterostructures by... GaAs-based heterostructures with one, two, or three InAs quantum-dot layers are examined by high-resolution x-ray diffraction. The quality and structure of the specimens are characterized from rocking curves. In the case of three quantum-dot layers, two different superlattices alternating in the lateral direction are discovered in the specimen. The superlattices differ in the InAs content of the GaAs matrix. It is shown that the existence of two superlattices is due to the vertical correlated growth of quantum dots and is related to an InAs wetting layer. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Characterization of Selectively Doped InAs-Quantum-Dot GaAs-Based Multilayer Heterostructures by High-Resolution X-ray Diffraction

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Publisher
Springer Journals
Copyright
Copyright © 2002 by MAIK "Nauka/Interperiodica"
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1020291009521
Publisher site
See Article on Publisher Site

Abstract

GaAs-based heterostructures with one, two, or three InAs quantum-dot layers are examined by high-resolution x-ray diffraction. The quality and structure of the specimens are characterized from rocking curves. In the case of three quantum-dot layers, two different superlattices alternating in the lateral direction are discovered in the specimen. The superlattices differ in the InAs content of the GaAs matrix. It is shown that the existence of two superlattices is due to the vertical correlated growth of quantum dots and is related to an InAs wetting layer.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 13, 2004

References

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