Characteristics of the kinetics of periodic structures CMP for a nonlinear pressure dependence of the polishing rate

Characteristics of the kinetics of periodic structures CMP for a nonlinear pressure dependence of... For the kinetics of the chemical mechanical polishing (CMP) of wafers containing periodic metal–dielectric structures, a model is developed and theoretically investigated with the use of contact mechanics methods for the nonlinear pressure dependences of the polishing rate. In the steady-state regime, expressions for the dishing effect, which is characterized by the difference in the depths of the polishing metal and dielectric strips, are analytically derived and investigated. The specific characteristics of this effect, which are observed for different kinds of nonlinearities of the polishing rate depending on the pressure and the relative rotation velocity of the pad and wafer, are analyzed. Particularly, it is shown that, under certain conditions, the steady-state regime may be nonunique (the bistability effect). http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Characteristics of the kinetics of periodic structures CMP for a nonlinear pressure dependence of the polishing rate

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Publisher
Pleiades Publishing
Copyright
Copyright © 2016 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739716030045
Publisher site
See Article on Publisher Site

Abstract

For the kinetics of the chemical mechanical polishing (CMP) of wafers containing periodic metal–dielectric structures, a model is developed and theoretically investigated with the use of contact mechanics methods for the nonlinear pressure dependences of the polishing rate. In the steady-state regime, expressions for the dishing effect, which is characterized by the difference in the depths of the polishing metal and dielectric strips, are analytically derived and investigated. The specific characteristics of this effect, which are observed for different kinds of nonlinearities of the polishing rate depending on the pressure and the relative rotation velocity of the pad and wafer, are analyzed. Particularly, it is shown that, under certain conditions, the steady-state regime may be nonunique (the bistability effect).

Journal

Russian MicroelectronicsSpringer Journals

Published: Jul 14, 2016

References

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