Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x (AlN) x semiconductor solid solution

Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x (AlN) x... A simple model of the metal–semiconductor contact that is nonlinear in the concentration of defects when the Schottky barrier is formed by the surface defect states E i localized at the interface has been proposed. It has been shown that taking into account the nonlinear dependence of the Fermi energy E F on the concentration of defects results in an increase in the Schottky barrier height by 15 to 25%. The calculated values of the Schottky barrier height have been used for the analysis of the current-voltage characteristics of M/(SiC)1–x (AlN) x structures. The theoretical results have been compared with the experimental data. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x (AlN) x semiconductor solid solution

Loading next page...
 
/lp/springer_journal/calculation-of-the-schottky-barrier-height-at-the-contact-between-a-TevxHa3z0A
Publisher
Pleiades Publishing
Copyright
Copyright © 2015 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739715060062
Publisher site
See Article on Publisher Site

Abstract

A simple model of the metal–semiconductor contact that is nonlinear in the concentration of defects when the Schottky barrier is formed by the surface defect states E i localized at the interface has been proposed. It has been shown that taking into account the nonlinear dependence of the Fermi energy E F on the concentration of defects results in an increase in the Schottky barrier height by 15 to 25%. The calculated values of the Schottky barrier height have been used for the analysis of the current-voltage characteristics of M/(SiC)1–x (AlN) x structures. The theoretical results have been compared with the experimental data.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 4, 2015

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 12 million articles from more than
10,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Unlimited reading

Read as many articles as you need. Full articles with original layout, charts and figures. Read online, from anywhere.

Stay up to date

Keep up with your field with Personalized Recommendations and Follow Journals to get automatic updates.

Organize your research

It’s easy to organize your research with our built-in tools.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve Freelancer

DeepDyve Pro

Price
FREE
$49/month

$360/year
Save searches from Google Scholar, PubMed
Create lists to organize your research
Export lists, citations
Access to DeepDyve database
Abstract access only
Unlimited access to over
18 million full-text articles
Print
20 pages/month
PDF Discount
20% off