Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x (AlN) x semiconductor solid solution

Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x (AlN) x... A simple model of the metal–semiconductor contact that is nonlinear in the concentration of defects when the Schottky barrier is formed by the surface defect states E i localized at the interface has been proposed. It has been shown that taking into account the nonlinear dependence of the Fermi energy E F on the concentration of defects results in an increase in the Schottky barrier height by 15 to 25%. The calculated values of the Schottky barrier height have been used for the analysis of the current-voltage characteristics of M/(SiC)1–x (AlN) x structures. The theoretical results have been compared with the experimental data. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x (AlN) x semiconductor solid solution

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Publisher
Springer Journals
Copyright
Copyright © 2015 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739715060062
Publisher site
See Article on Publisher Site

Abstract

A simple model of the metal–semiconductor contact that is nonlinear in the concentration of defects when the Schottky barrier is formed by the surface defect states E i localized at the interface has been proposed. It has been shown that taking into account the nonlinear dependence of the Fermi energy E F on the concentration of defects results in an increase in the Schottky barrier height by 15 to 25%. The calculated values of the Schottky barrier height have been used for the analysis of the current-voltage characteristics of M/(SiC)1–x (AlN) x structures. The theoretical results have been compared with the experimental data.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 4, 2015

References

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