The surface recombination current of bipolar transistors is calculated as a function of the charge of surface states, which is determined by the position of Fermi quasi-levels under a direct bias voltage across the emitter junction. It is shown that the calculation of radiation-induced surface recombination current can be reduces to the solution of the Shockley equation at the interface between a passivating oxide and the base taking into account the effect of surface states in the passivating oxide on the charge carrier concentration. A rigorous expression is derived for the surface recombination current per unit length.
Russian Microelectronics – Springer Journals
Published: Jan 8, 2009
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