Calculation of surface recombination current in bipolar microelectronic structures subjected to ionizing radiation

Calculation of surface recombination current in bipolar microelectronic structures subjected to... The surface recombination current of bipolar transistors is calculated as a function of the charge of surface states, which is determined by the position of Fermi quasi-levels under a direct bias voltage across the emitter junction. It is shown that the calculation of radiation-induced surface recombination current can be reduces to the solution of the Shockley equation at the interface between a passivating oxide and the base taking into account the effect of surface states in the passivating oxide on the charge carrier concentration. A rigorous expression is derived for the surface recombination current per unit length. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Calculation of surface recombination current in bipolar microelectronic structures subjected to ionizing radiation

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Publisher
Springer Journals
Copyright
Copyright © 2009 by MAIK Nauka
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S106373970901003X
Publisher site
See Article on Publisher Site

Abstract

The surface recombination current of bipolar transistors is calculated as a function of the charge of surface states, which is determined by the position of Fermi quasi-levels under a direct bias voltage across the emitter junction. It is shown that the calculation of radiation-induced surface recombination current can be reduces to the solution of the Shockley equation at the interface between a passivating oxide and the base taking into account the effect of surface states in the passivating oxide on the charge carrier concentration. A rigorous expression is derived for the surface recombination current per unit length.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jan 8, 2009

References

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