Get 20M+ Full-Text Papers For Less Than $1.50/day. Start a 14-Day Trial for You or Your Team.

Learn More →

Calculating the I-V characteristic of a single-electron diode

Calculating the I-V characteristic of a single-electron diode A theoretical study is presented of single-electron tunnel charging and Coulomb blockade in a structure consisting of two parallel plane gold electrodes with a spherical or circular gold nanocluster in between. The discrete energy spectrum of conduction electrons in the cluster is calculated. Equations are derived for the current-voltage characteristic of the structure, which presume energy conservation and include the contact potential. Restrictions associated with the Coulomb instability of the cluster and electron relaxation are incorporated into the theory. The width and asymmetry of the zero-conductance gap are calculated. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Calculating the I-V characteristic of a single-electron diode

Russian Microelectronics , Volume 36 (2) – Mar 30, 2007

Loading next page...
1
 
/lp/springer_journal/calculating-the-i-v-characteristic-of-a-single-electron-diode-hWAHjUtLWx

References (24)

Publisher
Springer Journals
Copyright
Copyright © 2007 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
DOI
10.1134/S1063739707020060
Publisher site
See Article on Publisher Site

Abstract

A theoretical study is presented of single-electron tunnel charging and Coulomb blockade in a structure consisting of two parallel plane gold electrodes with a spherical or circular gold nanocluster in between. The discrete energy spectrum of conduction electrons in the cluster is calculated. Equations are derived for the current-voltage characteristic of the structure, which presume energy conservation and include the contact potential. Restrictions associated with the Coulomb instability of the cluster and electron relaxation are incorporated into the theory. The width and asymmetry of the zero-conductance gap are calculated.

Journal

Russian MicroelectronicsSpringer Journals

Published: Mar 30, 2007

There are no references for this article.