Bulk electrochemical etching of semiconductor single-crystal silicon in HF-containing solutions

Bulk electrochemical etching of semiconductor single-crystal silicon in HF-containing solutions Effect of the component composition of an HF-containing electrolytic aqueous solution on the polishing electrochemical etching of semiconductor single-crystal silicon was studied. Propanol-2, SV-1017, and NH4F served as additional components of solutions used for this purpose. The conditions in which this process can be employed to form elements with 3D structure in microsystems devices were determined. An analysis of the results obtained led to an assumption that the hydrogen passivation of the surface of semiconductor single-crystal silicon is the rate-determining factor affecting the development of a bulk polishing electrochemical etching of this material. Because the process of polishing electrochemical etching of silicon wafers is preserved during approximately 20 min, the method is acceptable for formation of shallow grooves in microsystems devices. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Journal of Applied Chemistry Springer Journals

Bulk electrochemical etching of semiconductor single-crystal silicon in HF-containing solutions

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Publisher
Springer Journals
Copyright
Copyright © 2012 by Pleiades Publishing, Ltd.
Subject
Chemistry; Chemistry/Food Science, general; Industrial Chemistry/Chemical Engineering
ISSN
1070-4272
eISSN
1608-3296
D.O.I.
10.1134/S1070427212100102
Publisher site
See Article on Publisher Site

Abstract

Effect of the component composition of an HF-containing electrolytic aqueous solution on the polishing electrochemical etching of semiconductor single-crystal silicon was studied. Propanol-2, SV-1017, and NH4F served as additional components of solutions used for this purpose. The conditions in which this process can be employed to form elements with 3D structure in microsystems devices were determined. An analysis of the results obtained led to an assumption that the hydrogen passivation of the surface of semiconductor single-crystal silicon is the rate-determining factor affecting the development of a bulk polishing electrochemical etching of this material. Because the process of polishing electrochemical etching of silicon wafers is preserved during approximately 20 min, the method is acceptable for formation of shallow grooves in microsystems devices.

Journal

Russian Journal of Applied ChemistrySpringer Journals

Published: Nov 16, 2012

References

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