Boundary processes in the electrolyte–silicon interface area during the self-organization of the mosaic structure of 3D islets of porous silicon nanocrystallites in the long-term anode etching of p-Si (100) in electrolyte with an internal current source

Boundary processes in the electrolyte–silicon interface area during the self-organization of... The formation and self-organization of a porous silicon (por-Si) surface mosaic structure in the long-term anodic etching of p-type conductivity Si (100) (p-Si) in electrolytes with an internal power source is considered. We show that the formation of 3D islets of mosaic structure nanocrystallites of por-Si occurs with the participation of the adsorbed deposited silicon atoms formed as a result of disporportionation reactions during the etching of silicon single crystals, as in the case of the epitaxial growth of nanocrystallites by molecular beam deposition of silicon atoms on the A III B V and Si semiconductor surface and their further spontaneous self-organization. The quantum-size effects occurring in the local areas of the atomically rough surfaces of a real silicon crystal are taken into account. We note the significant role of oxidation of the silicon surface in the formation and self-organization of a mosaic structure of por-Si during long-term anodic etching of p-Si (100) in the HF: H2O2 electrolyte. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Boundary processes in the electrolyte–silicon interface area during the self-organization of the mosaic structure of 3D islets of porous silicon nanocrystallites in the long-term anode etching of p-Si (100) in electrolyte with an internal current source

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Publisher
Pleiades Publishing
Copyright
Copyright © 2015 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739715080120
Publisher site
See Article on Publisher Site

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