ISSN 10637397, Russian Microelectronics, 2015, Vol. 44, No. 8, pp. 559–563. © Pleiades Publishing, Ltd., 2015.
Original Russian Text © K.B. Tynyshtykbaev, Yu.A. Ryabikin, S.Zh. Tokmoldin, B.A. Rakymetov, T. Aytmukan, Kh.A. Abdullin, 2014, published in Izvestiya Vysshikh Uchebnykh
Zavedenii. Materialy Elektronnoi Tekhniki, 2014, No. 1, pp. 31–36.
559
INTRODUCTION
It is well known [1, 2] that the selforganization of
nanosized systems with the formation of periodically
ordered structures on a real solid body surface is deter
mined by the quantum effects, which are induced by
atomic roughness such as atomic steps and ledges [3]
and induce longrange capillaryelastic forces of sur
face tensions [4–6]. The selforganization effects of
nanosize structures on a solid body surface caused by
this type of sources are clearly seen, e.g, in the epitax
ial growth processes [7–9].
In addition to the longrange capillaryelastic
forces [4–6], ordering forces of surface point defects,
which arise in lowenergy interactions [10] and elec
trochemical etching [11], also play an important role
in the selforganization of nanostructures on a real
solid surface. Capillaryfluctuation forces [12, 13],
which arise at the interface with a conducting liquid,
also participate in the selforganization of nanostruc
tures on a solid surface.
The combined action of the mentioned forces in
the nanolevel ordering of the initial solid body surface
leads to the selforganization of nanostructures on a
real defect surface of the matrix. The effect in the self
organization process on a real surface depends on the
conditions of a given surface modification experiment,
where the quantum character of the forces might not
be manifested (as in the case of the appearance of their
longrange properties). Allowing for the combined
action of these forces may show new approaches in
understanding the nature of selforganization pro
cesses [7] and reveal new possibilities for developing
technologies of nanomaterials and nanodevices [8].
Therefore, it is of interest to investigate the process
of nanostructures’ selforganization on a solid body
surface, using as an example, a readily implemented
experiment on nanopore formation in silicon in the
electrochemical etching of Si single crystals with the
(100) orientation and
p
type conductivity (
p
Si) in
electrolytes containing a strong oxidizer (electrolytes
with an internal current source) [14].
In earlier experiments on [15, 16] the longterm
etching of monocrystalline
p
Si (100) in the electro
lyte HF (49%) : H
2
O
2
(40%), the formation and self
organization of a mosaic structure (MS) on the surface
of porous silicon (porSi) consisting of an ensemble of
3D islets of Si nanocrystallites (NCs) was observed.
This is due to the fact that the electrolyte/porSi/cSi
Boundary Processes in the Electrolyte–Silicon Interface Area
during the SelfOrganization of the Mosaic Structure of 3D Islets
of Porous Silicon Nanocrystallites in the LongTerm Anode Etching
of
p
Si (100) in Electrolyte with an Internal Current Source
K. B. Tynyshtykbaev
a
,
c
, Yu. A. Ryabikin
a
, S. Zh. Tokmoldin
a
, B. A. Rakymetov
a
,
T. Aytmukan
a
, and Kh. A. Abdullin
b
a
Institute of Physics and Technology, Almaty, 050032 Kazakhstan
b
AlFarabi Kazakh National University, Almaty, 050040 Kazakhstan
c
Nazarbayev University Research and Innovation Systems, Astana, 001000 Kazakhstan
email: kt011@sci.kz
Received November 7, 2012
Abstract
—The formation and selforganization of a porous silicon (porSi) surface mosaic structure in the
longterm anodic etching of
p
type conductivity Si (100) (pSi) in electrolytes with an internal power source
is considered. We show that the formation of 3D islets of mosaic structure nanocrystallites of porSi occurs
with the participation of the adsorbed deposited silicon atoms formed as a result of disporportionation reac
tions during the etching of silicon single crystals, as in the case of the epitaxial growth of nanocrystallites by
molecular beam deposition of silicon atoms on the
A
III
B
V
and Si semiconductor surface and their further
spontaneous selforganization. The quantumsize effects occurring in the local areas of the atomically rough
surfaces of a real silicon crystal are taken into account. We note the significant role of oxidation of the silicon
surface in the formation and selforganization of a mosaic structure of porSi during longterm anodic etch
ing of
p
Si (100) in the HF : H
2
O
2
electrolyte.
Keywords
: porous silicon, interface, selforganization
DOI:
10.1134/S1063739715080120
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