Atomic layer deposition of tantalum oxide with controlled oxygen deficiency for making resistive memory structures

Atomic layer deposition of tantalum oxide with controlled oxygen deficiency for making resistive... TaO x films with controlled ratio of Ta4+ and Ta5+ atoms were prepared at different hydrogen concentrations in plasma. As shown by X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry, the chemical state of Ta4+ corresponds to oxygen vacancies in the TaO x film. Electrophysical studies of the metal–dielectric–metal structures revealed an increase in the leakage current by four orders of magnitude as the hydrogen concentration in the plasma was increased from 7 to 70%, which is due to an increase in the concentration of oxygen vacancies in TaO x . A test structure of a resistive memory cell was made on the basis of the nonstoichiometric TaO x obtained. It withstood more than 106 rewriting cycles. The suggested atomic layer deposition process shows promise for solving one of the main problems of resistive memory: extension of its working life. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Journal of Applied Chemistry Springer Journals

Atomic layer deposition of tantalum oxide with controlled oxygen deficiency for making resistive memory structures

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Publisher
Pleiades Publishing
Copyright
Copyright © 2016 by Pleiades Publishing, Ltd.
Subject
Chemistry; Chemistry/Food Science, general; Industrial Chemistry/Chemical Engineering
ISSN
1070-4272
eISSN
1608-3296
D.O.I.
10.1134/S1070427216110136
Publisher site
See Article on Publisher Site

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