Aspect-ratio-independent anisotropic silicon etching in a plasma chemical cyclic process

Aspect-ratio-independent anisotropic silicon etching in a plasma chemical cyclic process The conditions of implementation of aspect-ratio-independent etching (ARIE) are given for a two-stage etching/passivation process in an SF6/C4F8 plasma. It is shown experimentally that the ARIE etching is achieved by extension of the stage of passivation and/or reduction of the energy of ions at the stage of etching. These phenomena lead to prolonged removal of the fluorocarbon film, which affects the dependence of the etching rate on the aspect ratio of the groove. A model of cyclic etching is presented that takes into account the aspect dependences of the processes on the groove bottom, namely, Si etching and deposition and removal of the fluorocarbon film. The simulation results correlate satisfactorily with the experimental data. Limitations of implementation of ARIE etching are discussed. Russian Microelectronics Springer Journals

Aspect-ratio-independent anisotropic silicon etching in a plasma chemical cyclic process

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Copyright © 2007 by Pleiades Publishing, Ltd.
Engineering; Electronic and Computer Engineering
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