Artificial Potential Relief in Carbon Films and Associated Heterostructures

Artificial Potential Relief in Carbon Films and Associated Heterostructures The possibility of constructing an artificial potential relief and fabricating multiple-quantum-well (MQW) structures based on ultrathin α-C : H layers is demonstrated. The photoelectric properties of the structures are studied, the carrier transfer mechanism is established, and the influence of the applied voltage on the carrier transfer mechanism is demonstrated. The effect of illumination on the active and reactive components of the admittance of the structures and on the charge transient energy spectra of recharging traps and relaxation centers is studied. The parameters of the MQW structures, such as concentration, energy position, and trapping cross sections of deep levels; band bending at the α-C : H/Si interface; potential well depths; etc. are determined. The α-C : H layers with a small trap concentration are obtained. Such layers can be used as gate dielectrics in MIS transistors. Single-crystal Si–α-C : H film heterostructures can operate as photodiodes, photovaractors, and dynamic memory elements. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Artificial Potential Relief in Carbon Films and Associated Heterostructures

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2001 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1011398411798
Publisher site
See Article on Publisher Site

Abstract

The possibility of constructing an artificial potential relief and fabricating multiple-quantum-well (MQW) structures based on ultrathin α-C : H layers is demonstrated. The photoelectric properties of the structures are studied, the carrier transfer mechanism is established, and the influence of the applied voltage on the carrier transfer mechanism is demonstrated. The effect of illumination on the active and reactive components of the admittance of the structures and on the charge transient energy spectra of recharging traps and relaxation centers is studied. The parameters of the MQW structures, such as concentration, energy position, and trapping cross sections of deep levels; band bending at the α-C : H/Si interface; potential well depths; etc. are determined. The α-C : H layers with a small trap concentration are obtained. Such layers can be used as gate dielectrics in MIS transistors. Single-crystal Si–α-C : H film heterostructures can operate as photodiodes, photovaractors, and dynamic memory elements.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 10, 2004

References

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