The possibility of constructing an artificial potential relief and fabricating multiple-quantum-well (MQW) structures based on ultrathin α-C : H layers is demonstrated. The photoelectric properties of the structures are studied, the carrier transfer mechanism is established, and the influence of the applied voltage on the carrier transfer mechanism is demonstrated. The effect of illumination on the active and reactive components of the admittance of the structures and on the charge transient energy spectra of recharging traps and relaxation centers is studied. The parameters of the MQW structures, such as concentration, energy position, and trapping cross sections of deep levels; band bending at the α-C : H/Si interface; potential well depths; etc. are determined. The α-C : H layers with a small trap concentration are obtained. Such layers can be used as gate dielectrics in MIS transistors. Single-crystal Si–α-C : H film heterostructures can operate as photodiodes, photovaractors, and dynamic memory elements.
Russian Microelectronics – Springer Journals
Published: Oct 10, 2004
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