Arc plasma deposition of Pd seeding for Cu electroless deposition

Arc plasma deposition of Pd seeding for Cu electroless deposition Arc plasma deposition (APD) has been used for surface treatment of glass and polyimide (PI) substrates for Cu electroless deposition (ELD). The thickness of Cu ELD films increased linearly with time up to 2,000 nm on glass and 3,400 nm on PI substrates. Resistivity of Cu ELD films on glass (1.4–3.4 μΩ cm) and on PI (4.1–5.8 μΩ cm) was lower than that reported for conventional ELD processes (5–10 μΩ cm). The adhesion strength of Cu ELD films produced by our process was as good as, or better than, that for conventional Cu ELD films. APD is an effective, simple, and dry method for deposition of the seed layer for ELD on the surfaces of insulating materials. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Research on Chemical Intermediates Springer Journals

Arc plasma deposition of Pd seeding for Cu electroless deposition

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Publisher
Springer Netherlands
Copyright
Copyright © 2013 by Springer Science+Business Media Dordrecht
Subject
Chemistry; Catalysis; Physical Chemistry; Inorganic Chemistry
ISSN
0922-6168
eISSN
1568-5675
D.O.I.
10.1007/s11164-013-1455-y
Publisher site
See Article on Publisher Site

Abstract

Arc plasma deposition (APD) has been used for surface treatment of glass and polyimide (PI) substrates for Cu electroless deposition (ELD). The thickness of Cu ELD films increased linearly with time up to 2,000 nm on glass and 3,400 nm on PI substrates. Resistivity of Cu ELD films on glass (1.4–3.4 μΩ cm) and on PI (4.1–5.8 μΩ cm) was lower than that reported for conventional ELD processes (5–10 μΩ cm). The adhesion strength of Cu ELD films produced by our process was as good as, or better than, that for conventional Cu ELD films. APD is an effective, simple, and dry method for deposition of the seed layer for ELD on the surfaces of insulating materials.

Journal

Research on Chemical IntermediatesSpringer Journals

Published: Oct 26, 2013

References

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