Applying the in situ X-ray reflectometry method to define the nanodimensional silicon film parameters

Applying the in situ X-ray reflectometry method to define the nanodimensional silicon film... The monitoring methods for measuring the film structure parameters in formation process, namely, the in situ methods, are currently of special significance. Their application provides obtaining the films with the given characteristics, which results in a fast correction of the technological modes. The possibilities of the in situ method of the X-ray reflectometry for defining the parameters of the nanodimensional films during their formation are discussed. The results are given of testing the magnetron deposition of the silicon films and other materials on the silicon substrate. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Applying the in situ X-ray reflectometry method to define the nanodimensional silicon film parameters

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Publisher
Pleiades Publishing
Copyright
Copyright © 2014 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739714080125
Publisher site
See Article on Publisher Site

Abstract

The monitoring methods for measuring the film structure parameters in formation process, namely, the in situ methods, are currently of special significance. Their application provides obtaining the films with the given characteristics, which results in a fast correction of the technological modes. The possibilities of the in situ method of the X-ray reflectometry for defining the parameters of the nanodimensional films during their formation are discussed. The results are given of testing the magnetron deposition of the silicon films and other materials on the silicon substrate.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 26, 2014

References

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