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Anomalous photoconductivity decay observed in microwave measurements of carrier lifetime in silicon ingots

Anomalous photoconductivity decay observed in microwave measurements of carrier lifetime in... A brief description is given of a microwave noncontact method for measuring excess-carrier lifetime in which a base of the ingot under investigation is selected for pulsed illumination. The method is employed in an experiment on silicon ingots placed between an emitting and a receiving waveguide, with the illumination provided by a 1.06-μm semiconductor laser. With an illuminated area of about 1 mm2, photoconductivity decay is found to start a considerable length of time following the cessation of the light pulse. The causes of this phenomenon are yet to be identified. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Anomalous photoconductivity decay observed in microwave measurements of carrier lifetime in silicon ingots

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References (2)

Publisher
Springer Journals
Copyright
Copyright © 2006 by Pleiades Publishing, Inc.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
DOI
10.1134/S1063739706060011
Publisher site
See Article on Publisher Site

Abstract

A brief description is given of a microwave noncontact method for measuring excess-carrier lifetime in which a base of the ingot under investigation is selected for pulsed illumination. The method is employed in an experiment on silicon ingots placed between an emitting and a receiving waveguide, with the illumination provided by a 1.06-μm semiconductor laser. With an illuminated area of about 1 mm2, photoconductivity decay is found to start a considerable length of time following the cessation of the light pulse. The causes of this phenomenon are yet to be identified.

Journal

Russian Microelectronics – Springer Journals

Published: Oct 26, 2006

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