A brief description is given of a microwave noncontact method for measuring excess-carrier lifetime in which a base of the ingot under investigation is selected for pulsed illumination. The method is employed in an experiment on silicon ingots placed between an emitting and a receiving waveguide, with the illumination provided by a 1.06-μm semiconductor laser. With an illuminated area of about 1 mm2, photoconductivity decay is found to start a considerable length of time following the cessation of the light pulse. The causes of this phenomenon are yet to be identified.
Russian Microelectronics – Springer Journals
Published: Oct 26, 2006
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