Anomalous Kossel effect in semiconductor structures

Anomalous Kossel effect in semiconductor structures A theoretical analysis is made of the intensity distribution within a Kossel line from a semiconductor crystal in an extremely asymmetric x-ray diffraction scheme. Crystals of thickness comparable with the x-ray penetration depth are evaluated as a potential means of bringing about the anomalous Kossel effect, which is predicted to occur in the vicinity of a degenerate point. The possibility is investigated of using a thin amorphous film to enhance the effect. Dispersion-surface geometry, excitation points, and Poynting-vector directions are examined in detail for the anomalous Kossel effect. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Anomalous Kossel effect in semiconductor structures

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Publisher
Nauka/Interperiodica
Copyright
Copyright © 2006 by Pleiades Publishing, Inc.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739706060047
Publisher site
See Article on Publisher Site

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