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J. Brews (1983)
Rapid interface parameterization using a single MOS conductance curveSolid-state Electronics, 26
E. Nicollian, A. Goetzberger, A. Lopez (1969)
Expedient method of obtaining interface state properties from MIS conductance measurementsSolid-state Electronics, 12
E. Bano, T. Ouisse, L. Cioccio, S. Karmann (1994)
Surface potential fluctuations in metal–oxide–semiconductor capacitors fabricated on different silicon carbide polytypesApplied Physics Letters, 65
E. Nicollian, A. Goetzberger (1965)
MOS CONDUCTANCE TECHNIQUE FOR MEASURING SURFACE STATE PARAMETERSApplied Physics Letters, 7
K. Lehovec (1966)
FREQUENCY DEPENDENCE OF THE IMPEDANCE OF DISTRIBUTED SURFACE STATES IN MOS STRUCTURESApplied Physics Letters, 8
K. Schuegraf, C. Hu (1994)
Reliability of thin SiO2Semiconductor Science and Technology, 9
J. Simonne (1973)
A method to extract interface state parameters from the MIS parallel conductance techniqueSolid-state Electronics, 16
E. Nicollian, A. Goetzberger (1967)
The si-sio, interface – electrical properties as determined by the metal-insulator-silicon conductance techniqueBell System Technical Journal, 46
For metal-insulator-semiconductor structures, a technique is described of analyzing the normalized conductance measured as a function of frequency with regard to the random variation of surface potential and the presence of electrically active states inside the insulator. Parameters are selected that are to be used in evaluating the amount by which the conductance-frequency characteristic is broadened. Analytical expressions are derived for the parameters. A method is proposed for separating the respective contributions of the tunneling and fluctuation mechanisms of the broadening. It enables one to evaluate the depth of the electrically active states and the variance of the surface potential when the two factors make comparable contributions to the inhomogeneity of the insulator-semiconductor interface.
Russian Microelectronics – Springer Journals
Published: Nov 16, 2007
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