Analyzing conductance-frequency curves of metal-insulator-semiconductor structures subject to surface-potential fluctuations and electrically active states inside the insulator

Analyzing conductance-frequency curves of metal-insulator-semiconductor structures subject to... For metal-insulator-semiconductor structures, a technique is described of analyzing the normalized conductance measured as a function of frequency with regard to the random variation of surface potential and the presence of electrically active states inside the insulator. Parameters are selected that are to be used in evaluating the amount by which the conductance-frequency characteristic is broadened. Analytical expressions are derived for the parameters. A method is proposed for separating the respective contributions of the tunneling and fluctuation mechanisms of the broadening. It enables one to evaluate the depth of the electrically active states and the variance of the surface potential when the two factors make comparable contributions to the inhomogeneity of the insulator-semiconductor interface. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Analyzing conductance-frequency curves of metal-insulator-semiconductor structures subject to surface-potential fluctuations and electrically active states inside the insulator

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Publisher
Nauka/Interperiodica
Copyright
Copyright © 2007 by Pleiades Publishing, Ltd.
Subject
Engineering; Electronic and Computer Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739707060078
Publisher site
See Article on Publisher Site

Abstract

For metal-insulator-semiconductor structures, a technique is described of analyzing the normalized conductance measured as a function of frequency with regard to the random variation of surface potential and the presence of electrically active states inside the insulator. Parameters are selected that are to be used in evaluating the amount by which the conductance-frequency characteristic is broadened. Analytical expressions are derived for the parameters. A method is proposed for separating the respective contributions of the tunneling and fluctuation mechanisms of the broadening. It enables one to evaluate the depth of the electrically active states and the variance of the surface potential when the two factors make comparable contributions to the inhomogeneity of the insulator-semiconductor interface.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 16, 2007

References

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