In this paper, zinc phthalocyanine (ZnPc) is chosen as the active layer to form a vertical thin film phototransistor with a structure of Cu/ZnPc/Al/ZnPc/ITO. ZnPc has a good photo-sensitive characteristic. Illumination can promote the production of electron–hole pairs, and illumination can reduces the height of the Schottky barrier. When Vbc = 0 V, the barrier height is 0.485 eV under 351 nm light, and the barrier height is 0.509 eV under darkness. It can be concluded that illumination can reduces the barrier height of 0.024 eV in this device.
Optical and Quantum Electronics – Springer Journals
Published: Jul 12, 2017
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