Design and fabrication of an in-plane silicon Fabry–Perot temperature sensor for ﬁber-optic temperature sensing was reported in our previous work. To fabricate this sensor, deep reactive ion etching process was utilized which is challenging due to the large depth of etching needed for the device. Required optically smooth surfaces and highly vertical sidewalls as well as minimum amount of under-etch are difﬁcult to be achieved in deep-etched structures. Here, the fabrication errors are brieﬂy introduced and thereafter a numerical analysis based on the transfer-matrix formulation for propagation of Gaussian beams across the proposed silicon Fabry–Perot resonator is developed. Finally, the fabricated sensor is modeled and the device performance degradation due to fabrication imperfections is estimated. 1 Introduction 2015; Irace and Breglio 2003; Breglio et al. 2001; Deng et al. 2014). Silicon-based ﬁber-optic temperature sensors are being In-plane design of a temperature sensor in which silicon considered as devices appropriate for integration with opto- substrate is vertically etched facilitates installation and and micro-electronic devices. While achieving fast, high- alignment of optical ﬁbers in easy to ﬁt grooves. In (Zarei resolution, high sensitivity, and large dynamic range, these et al. 2017), we have designed, fabricated, and character- sensors are small size,
Microsystem Technologies – Springer Journals
Published: Jun 1, 2018
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