Analysis of a fiber-optic deep-etched silicon Fabry–Perot temperature sensor and modeling its fabrication imperfections

Analysis of a fiber-optic deep-etched silicon Fabry–Perot temperature sensor and modeling its... Design and fabrication of an in-plane silicon Fabry–Perot temperature sensor for fiber-optic temperature sensing was reported in our previous work. To fabricate this sensor, deep reactive ion etching process was utilized which is challenging due to the large depth of etching needed for the device. Required optically smooth surfaces and highly vertical sidewalls as well as minimum amount of under-etch are difficult to be achieved in deep-etched structures. Here, the fabrication errors are briefly introduced and thereafter a numerical analysis based on the transfer-matrix formulation for propagation of Gaussian beams across the proposed silicon Fabry–Perot resonator is developed. Finally, the fabricated sensor is modeled and the device performance degradation due to fabrication imperfections is estimated. 1 Introduction 2015; Irace and Breglio 2003; Breglio et al. 2001; Deng et al. 2014). Silicon-based fiber-optic temperature sensors are being In-plane design of a temperature sensor in which silicon considered as devices appropriate for integration with opto- substrate is vertically etched facilitates installation and and micro-electronic devices. While achieving fast, high- alignment of optical fibers in easy to fit grooves. In (Zarei resolution, high sensitivity, and large dynamic range, these et al. 2017), we have designed, fabricated, and character- sensors are small size, http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Microsystem Technologies Springer Journals

Analysis of a fiber-optic deep-etched silicon Fabry–Perot temperature sensor and modeling its fabrication imperfections

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Publisher
Springer Journals
Copyright
Copyright © 2018 by Springer-Verlag GmbH Germany, part of Springer Nature
Subject
Engineering; Electronics and Microelectronics, Instrumentation; Nanotechnology; Mechanical Engineering
ISSN
0946-7076
eISSN
1432-1858
D.O.I.
10.1007/s00542-018-3978-z
Publisher site
See Article on Publisher Site

Abstract

Design and fabrication of an in-plane silicon Fabry–Perot temperature sensor for fiber-optic temperature sensing was reported in our previous work. To fabricate this sensor, deep reactive ion etching process was utilized which is challenging due to the large depth of etching needed for the device. Required optically smooth surfaces and highly vertical sidewalls as well as minimum amount of under-etch are difficult to be achieved in deep-etched structures. Here, the fabrication errors are briefly introduced and thereafter a numerical analysis based on the transfer-matrix formulation for propagation of Gaussian beams across the proposed silicon Fabry–Perot resonator is developed. Finally, the fabricated sensor is modeled and the device performance degradation due to fabrication imperfections is estimated. 1 Introduction 2015; Irace and Breglio 2003; Breglio et al. 2001; Deng et al. 2014). Silicon-based fiber-optic temperature sensors are being In-plane design of a temperature sensor in which silicon considered as devices appropriate for integration with opto- substrate is vertically etched facilitates installation and and micro-electronic devices. While achieving fast, high- alignment of optical fibers in easy to fit grooves. In (Zarei resolution, high sensitivity, and large dynamic range, these et al. 2017), we have designed, fabricated, and character- sensors are small size,

Journal

Microsystem TechnologiesSpringer Journals

Published: Jun 1, 2018

References

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