An impressive structure containing triple trenches for RF power performance (TT-SOI-MESFET)

An impressive structure containing triple trenches for RF power performance (TT-SOI-MESFET) The radio-frequency (RF) power characteristics of a silicon-on-insulator metal–semiconductor field-effect transistor (SOI-MESFET) were improved with effective optimization of the simple structure. Separate triple trenches were introduced in the proposed device to improve the electrical performance. The SOI-MESFET with separate triple trenches (TT-SOI-MESFET) benefits from these trenches for dispersion of the potential lines, leading to enhanced RF power features. A comparison of the proposed structure with the simple SOI-MESFET structure revealed that the TT-SOI-MESFET exhibited improved RF power characteristics in terms of breakdown voltage, drain–source conductance, gate–source capacitance, total gate capacitance, maximum output power density, minimum noise figure and global lattice temperature. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Computational Electronics Springer Journals

An impressive structure containing triple trenches for RF power performance (TT-SOI-MESFET)

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Publisher
Springer Journals
Copyright
Copyright © 2017 by Springer Science+Business Media, LLC
Subject
Engineering; Mathematical and Computational Engineering; Electrical Engineering; Theoretical, Mathematical and Computational Physics; Optical and Electronic Materials; Mechanical Engineering
ISSN
1569-8025
eISSN
1572-8137
D.O.I.
10.1007/s10825-017-1078-4
Publisher site
See Article on Publisher Site

Abstract

The radio-frequency (RF) power characteristics of a silicon-on-insulator metal–semiconductor field-effect transistor (SOI-MESFET) were improved with effective optimization of the simple structure. Separate triple trenches were introduced in the proposed device to improve the electrical performance. The SOI-MESFET with separate triple trenches (TT-SOI-MESFET) benefits from these trenches for dispersion of the potential lines, leading to enhanced RF power features. A comparison of the proposed structure with the simple SOI-MESFET structure revealed that the TT-SOI-MESFET exhibited improved RF power characteristics in terms of breakdown voltage, drain–source conductance, gate–source capacitance, total gate capacitance, maximum output power density, minimum noise figure and global lattice temperature.

Journal

Journal of Computational ElectronicsSpringer Journals

Published: Oct 20, 2017

References

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