The radio-frequency (RF) power characteristics of a silicon-on-insulator metal–semiconductor field-effect transistor (SOI-MESFET) were improved with effective optimization of the simple structure. Separate triple trenches were introduced in the proposed device to improve the electrical performance. The SOI-MESFET with separate triple trenches (TT-SOI-MESFET) benefits from these trenches for dispersion of the potential lines, leading to enhanced RF power features. A comparison of the proposed structure with the simple SOI-MESFET structure revealed that the TT-SOI-MESFET exhibited improved RF power characteristics in terms of breakdown voltage, drain–source conductance, gate–source capacitance, total gate capacitance, maximum output power density, minimum noise figure and global lattice temperature.
Journal of Computational Electronics – Springer Journals
Published: Oct 20, 2017
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