An adsorption ellipsometric method for studying porous films and coatings

An adsorption ellipsometric method for studying porous films and coatings An adsorption ellipsometric method (AEM) that combines multiple-angle ellipsometry, effective-medium approximation, and measurements in a vacuum chamber is suggested. A variety of models and a modified technique for estimating the accuracy of measured parameters extend the ellipsometry potentialities and provide a high reliability of data obtained. The use of the method for porosity determination in the 0.5-70% range was demonstrated with CeO-ZrO2, SiO2, PbO-SiO2,a-C : H, In2O3-SnO2 (ITO), and other films. An approach to finding the porosity, component fraction, and relative composition of pores in porous silicon layers is proposed. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

An adsorption ellipsometric method for studying porous films and coatings

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Publisher
Nauka/Interperiodica
Copyright
Copyright © 2000 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electronic and Computer Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1007/BF02773285
Publisher site
See Article on Publisher Site

Abstract

An adsorption ellipsometric method (AEM) that combines multiple-angle ellipsometry, effective-medium approximation, and measurements in a vacuum chamber is suggested. A variety of models and a modified technique for estimating the accuracy of measured parameters extend the ellipsometry potentialities and provide a high reliability of data obtained. The use of the method for porosity determination in the 0.5-70% range was demonstrated with CeO-ZrO2, SiO2, PbO-SiO2,a-C : H, In2O3-SnO2 (ITO), and other films. An approach to finding the porosity, component fraction, and relative composition of pores in porous silicon layers is proposed.

Journal

Russian MicroelectronicsSpringer Journals

Published: Dec 4, 2007

References

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