Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing

Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing In this paper, amorphous silicon nanowires (α-SiNWs) were synthesized on (100) Si substrate with silicon oxide film by Cu catalyst-driven solid-liquid-solid mechanism (SLS) during annealing process (1080 °C for 30 min under Ar/H2 atmosphere). Micro size Cu pattern fabrication decided whether α-SiNWs can grow or not. Meanwhile, those micro size Cu patterns also controlled the position and density of wires. During the annealing process, Cu pattern reacted with SiO2 to form Cu silicide. More important, a diffusion channel was opened for Si atoms to synthesis α-SiNWs. What is more, the size of α-SiNWs was simply controlled by the annealing time. The length of wire was increased with annealing time. However, the diameter showed the opposite tendency. The room temperature resistivity of the nanowire was about 2.1 × 103 Ω·cm (84 nm diameter and 21 μm length). This simple fabrication method makes application of α-SiNWs become possible. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Nanoscale Research Letters Springer Journals

Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing

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Publisher
Springer US
Copyright
Copyright © 2017 by The Author(s).
Subject
Materials Science; Nanotechnology; Nanotechnology and Microengineering; Nanoscale Science and Technology; Nanochemistry; Molecular Medicine
ISSN
1931-7573
eISSN
1556-276X
D.O.I.
10.1186/s11671-017-2251-1
Publisher site
See Article on Publisher Site

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