Advantages of the use of beams of focused Xe+ ions obtained from supertip sources with field ionization (GFIS*) in ion microscopy compared with conventional sources of different ions are considered. Specifically, the higher working temperature of supertip Xe+ sources with field gas ionization as well as the higher values of the interaction sections of the Xe+ ions with different solid targets are a considerable technical advantage. The properties of focused Xe+ ion beams with a special accent on optimization of ion-optical systems of microscopes are evaluated. The possibilities of nanomodification and elemental analysis of materials with the use of beams of Xe+ ions are considered.
Russian Microelectronics – Springer Journals
Published: Jan 15, 2011
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