Adjusting the Spectral Response of Silicon Photodiodes by Additional Dopant Implantation

Adjusting the Spectral Response of Silicon Photodiodes by Additional Dopant Implantation The implantation of an additional p+ layer into the substrate of a silicon n+-p photodiode is theoretically evaluated as a method for adjusting its spectral response. It is shown that a fairly small p+-p potential barrier so created will greatly reduce the collection of electrons excited by long-wavelength photons in the bulk of the substrate. A suitable doping concentration is estimated at 1017 cm−3 by computer simulation. It is also found that boron-ion implantation in the energy range 300–800 keV will ensure adjustment of the spectral response in the visible range. A manageable analytical model is constructed. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Adjusting the Spectral Response of Silicon Photodiodes by Additional Dopant Implantation

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Publisher
Springer Journals
Copyright
Copyright © 2005 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1007/s11180-005-0024-5
Publisher site
See Article on Publisher Site

Abstract

The implantation of an additional p+ layer into the substrate of a silicon n+-p photodiode is theoretically evaluated as a method for adjusting its spectral response. It is shown that a fairly small p+-p potential barrier so created will greatly reduce the collection of electrons excited by long-wavelength photons in the bulk of the substrate. A suitable doping concentration is estimated at 1017 cm−3 by computer simulation. It is also found that boron-ion implantation in the energy range 300–800 keV will ensure adjustment of the spectral response in the visible range. A manageable analytical model is constructed.

Journal

Russian MicroelectronicsSpringer Journals

Published: May 19, 2005

References

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