Activated-process parameters for diamond, silicon, and germanium crystals

Activated-process parameters for diamond, silicon, and germanium crystals Vacancy-formation parameters are calculated for crystals belonging to group IV elements: C (diamond), Si, Ge, α-Sn, and Pb. A method is proposed for dealing with both the quantum phenomena at low temperatures and atomic delocalization at high temperatures. The latter feature is shown to result in larger predicted values of vacancy-formation enthalpy, entropy, and volume. Considerable temperature dependence of vacancy-formation parameters is predicted for temperatures below a certain point, including sign reversal for vacancy-formation entropy. Applied at high temperatures, the method is found to show close agreement with previous experimental and theoretical results. Russian Microelectronics Springer Journals

Activated-process parameters for diamond, silicon, and germanium crystals

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SP MAIK Nauka/Interperiodica
Copyright © 2011 by Pleiades Publishing, Ltd.
Engineering; Electrical Engineering
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