Activated-process parameters for diamond, silicon, and germanium crystals

Activated-process parameters for diamond, silicon, and germanium crystals Vacancy-formation parameters are calculated for crystals belonging to group IV elements: C (diamond), Si, Ge, α-Sn, and Pb. A method is proposed for dealing with both the quantum phenomena at low temperatures and atomic delocalization at high temperatures. The latter feature is shown to result in larger predicted values of vacancy-formation enthalpy, entropy, and volume. Considerable temperature dependence of vacancy-formation parameters is predicted for temperatures below a certain point, including sign reversal for vacancy-formation entropy. Applied at high temperatures, the method is found to show close agreement with previous experimental and theoretical results. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Activated-process parameters for diamond, silicon, and germanium crystals

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2011 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739711080130
Publisher site
See Article on Publisher Site

Abstract

Vacancy-formation parameters are calculated for crystals belonging to group IV elements: C (diamond), Si, Ge, α-Sn, and Pb. A method is proposed for dealing with both the quantum phenomena at low temperatures and atomic delocalization at high temperatures. The latter feature is shown to result in larger predicted values of vacancy-formation enthalpy, entropy, and volume. Considerable temperature dependence of vacancy-formation parameters is predicted for temperatures below a certain point, including sign reversal for vacancy-formation entropy. Applied at high temperatures, the method is found to show close agreement with previous experimental and theoretical results.

Journal

Russian MicroelectronicsSpringer Journals

Published: Dec 9, 2011

References

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