Acoustic Phonons and Mechanical Properties of Ultra-Thin Porous Low-k Films: A Surface Brillouin Scattering Study

Acoustic Phonons and Mechanical Properties of Ultra-Thin Porous Low-k Films: A Surface Brillouin... To reduce the RC (resistance–capacitance) time delay of interconnects, a key development of the past 20 years has been the introduction of porous low-k dielectrics to replace the traditional use of SiO2. Moreover, in keeping pace with concomitant reduction in technology nodes, these low-k materials have reached thicknesses below 100 nm wherein the porosity becomes a significant fraction of the film volume. The large degree of porosity not only reduces mechanical strength of the dielectric layer but also renders a need for non-destructive approaches to measure the mechanical properties of such ultra-thin films within device configurations. In this study, surface Brillouin scattering (SBS) is utilized to determine the elastic constants, Poisson’s ratio, and Young’s modulus of these porous low-k SiOC:H films (∼ 25–250 nm thick) grown on Si substrates by probing surface acoustic phonons and their dispersions. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Electronic Materials Springer Journals

Acoustic Phonons and Mechanical Properties of Ultra-Thin Porous Low-k Films: A Surface Brillouin Scattering Study

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Publisher
Springer Journals
Copyright
Copyright © 2018 by The Minerals, Metals & Materials Society
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials; Electronics and Microelectronics, Instrumentation; Solid State Physics
ISSN
0361-5235
eISSN
1543-186X
D.O.I.
10.1007/s11664-018-6276-8
Publisher site
See Article on Publisher Site

Abstract

To reduce the RC (resistance–capacitance) time delay of interconnects, a key development of the past 20 years has been the introduction of porous low-k dielectrics to replace the traditional use of SiO2. Moreover, in keeping pace with concomitant reduction in technology nodes, these low-k materials have reached thicknesses below 100 nm wherein the porosity becomes a significant fraction of the film volume. The large degree of porosity not only reduces mechanical strength of the dielectric layer but also renders a need for non-destructive approaches to measure the mechanical properties of such ultra-thin films within device configurations. In this study, surface Brillouin scattering (SBS) is utilized to determine the elastic constants, Poisson’s ratio, and Young’s modulus of these porous low-k SiOC:H films (∼ 25–250 nm thick) grown on Si substrates by probing surface acoustic phonons and their dispersions.

Journal

Journal of Electronic MaterialsSpringer Journals

Published: Apr 13, 2018

References

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