Experiments are analyzed on scanning electron microscopes (SEMs) with test objects having a trapezoidal profile and large tilt angles of the side walls. Based on the analysis, a semiempirical generation model of images in a SEM, operating in the low-voltage mode and high-voltage mode during recording back-scattered and secondary slow electrons (SSEs), is proposed. The model is intended for application in a virtual SEM (VSEM).
Russian Microelectronics – Springer Journals
Published: Jul 15, 2014
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