An system for precision selective ion-beam etching of nanostructures for field-emission devices is developed. The system is equipped with a Radikal-M160 multibeam ion source with a cold cathode and closed electron drift forming the ion beam of the working substance with a diameter of 160 mm and a microwave input for the supply of the microwave bias to the treated substrates. Technological possibilities of the system are investigated experimentally. The advantages of simultaneous ion-beam and microwave etching of the nanostructures are shown. The processes of precision etching of nanostructures through a mask up to 1 μm thick with diameters of orifices of 20–30 nm (aspect ratio of the structures of the mask ∼50: 1) are carried out.
Russian Microelectronics – Springer Journals
Published: Jul 21, 2010
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