ISSN 10637397, Russian Microelectronics, 2010, Vol. 39, No. 4, pp. 252–261. © Pleiades Publishing, Ltd., 2010.
Original Russian Text © Yu.P. Maishev, Yu.P. Terent’ev, S.L. Shevchuk, N.I. Tatarenko, V.A. Golikov, 2010, published in Mikroelektronika, 2010, Vol. 39, No. 4, pp. 274–283
An important direction in the development of
modern vacuum nanoelectronics is the design of thin
film nanostructural fieldemission microdevices com
parable with semiconductor microdevices by working
voltages and achievable degree of integration and
exceeding them in performance as well as radiation
and thermal stability .
To implement such microdevices, it is necessary to
obtain nanodimensional elements with maximally
dense packing. The fabrication of such matrices using
lithographic processes is complicated because of the
complexity and low productivity in obtaining resistive
One of the methods to solve this problem is the use
of masks made of nanoporous anodic aluminum oxide
with nanodimensional pores. With the thickness of
such masks of ~1
m, pore diameters can be tens of
nanometers. The aspect ratio (the ratio of the mask’s
thickness to the minimal elements’ size) in such masks
is ~(10–50) : 1.
For the treatment of functional layers of field
emission devices, the use of such masks requires one to
perform the processes of anisotropic and precision
One such process is etching by ions of inert or
chemically active gases [2, 3].
Upon etching through relatively thick dielectric
masks by an ion beam, a positive charge is formed on
the mask surface. This charge should be neutralized by
the electron beam equal in magnitude to the ion beam.
As usual, incandescent thermoemission cathodes
are used for these purposes. The service life of these
cathodes is substantially restricted during the opera
tion with chemically active substances.
We suggested the method of neutralization of the
charge on the surface of the dielectric or resistive mask
using the supply of the microwave potential to the sub
The advantages of the supply of the microwave
potential to the substrate are as follows.
(i) It is possible to control the charge on the sub
strate surface, which allows one to eliminate the
breakdowns in it and distortions in ion trajectories
during etching through the resistive mask.
(ii) The presence of the ion beam during micro
wave etching of the substrate substantially (sometimes
by an order of magnitude) decreases the working pres
sure, at which the charge is ignited, which allows one
to increase the resolving ability of microwave etching.
It should be noted that the equipment, which
allows one to carry out etching of thinfilm nanodi
mensional structures with the use of the ionbeam and
reactive etching, is absent.
This caused the necessity to develop a specialized
system for precision selective reactive ionbeam nan
odimensional etching (RIBNE) of metallic and
dielectric thin films through a mask made of porous
aluminum oxide and resist on substrates made of sitall
mm) or silicon (wafer diameter up to
100 mm), targeted for the formation of nanostructures
with minimal element sizes (up to 20 nm) for field
A System for Precision Reactive IonBeam Etching
of Nanostructures for FieldEmission Devices
Yu. P. Maishev
*, Yu. P. Terent’ev
, S. L. Shevchuk
, N. I. Tatarenko
, and V. A. Golikov
Physical–Technological Institute, Russian Academy of Sciences, Nakhimovskii pr. 36/1, Moscow, 117218 Russia
FGUP Research Institute of Precision Instruments, ul. Dekabristov vl. 51, Moscow, 127490 Russia
Received September 23, 2009
—An system for precision selective ionbeam etching of nanostructures for fieldemission devices is
developed. The system is equipped with a RadikalM160 multibeam ion source with a cold cathode and
closed electron drift forming the ion beam of the working substance with a diameter of 160 mm and a micro
wave input for the supply of the microwave bias to the treated substrates. Technological possibilities of the sys
tem are investigated experimentally. The advantages of simultaneous ionbeam and microwave etching of the
nanostructures are shown. The processes of precision etching of nanostructures through a mask up to 1
thick with diameters of orifices of 20–30 nm (aspect ratio of the structures of the mask ~50 : 1) are carried out.