A new type of device, symmetric bipolar structure, is discussed. The base of this structure is undoped unlike in conventional bipolar transistors. The structure can function both as annpn and as apnp lowvoltage transistor. The performance of the submicron symmetric bipolar structures was numerically evaluated. It is shown that devices based on such structures offer high output capacity and high amplification. They can operate at sizes of 100 nm or less.
Russian Microelectronics – Springer Journals
Published: Dec 4, 2007
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