A study on electrical characterization and band offset of ITO/n-Si(111) heterojunction by pulsed laser deposition

A study on electrical characterization and band offset of ITO/n-Si(111) heterojunction by pulsed... The ITO films was deposited on the surface of n-Si(111) substrate for the fabrication of ITO/n-Si(111) heterojunction by the pulsed laser deposition. The electrical properties and band alignment of ITO/n-Si(111) heterojunction was investigated by current–voltage measurement and X-ray photoelectron spectroscopy, respectively. It was found that the different transport mechanisms presented in the linear region of the forward bias ln I–V, which was due to the different form of In2O3 at the interface of ITO/n-Si(111) heterojunction. According to XPS measurement, the valence band offsets at the interface were calculated to be −2.5 ± 0.15 eV, which is the type II band alignments. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science: Materials in Electronics Springer Journals

A study on electrical characterization and band offset of ITO/n-Si(111) heterojunction by pulsed laser deposition

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Publisher
Springer US
Copyright
Copyright © 2017 by Springer Science+Business Media New York
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials
ISSN
0957-4522
eISSN
1573-482X
D.O.I.
10.1007/s10854-017-7137-6
Publisher site
See Article on Publisher Site

Abstract

The ITO films was deposited on the surface of n-Si(111) substrate for the fabrication of ITO/n-Si(111) heterojunction by the pulsed laser deposition. The electrical properties and band alignment of ITO/n-Si(111) heterojunction was investigated by current–voltage measurement and X-ray photoelectron spectroscopy, respectively. It was found that the different transport mechanisms presented in the linear region of the forward bias ln I–V, which was due to the different form of In2O3 at the interface of ITO/n-Si(111) heterojunction. According to XPS measurement, the valence band offsets at the interface were calculated to be −2.5 ± 0.15 eV, which is the type II band alignments.

Journal

Journal of Materials Science: Materials in ElectronicsSpringer Journals

Published: May 18, 2017

References

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