The ITO films was deposited on the surface of n-Si(111) substrate for the fabrication of ITO/n-Si(111) heterojunction by the pulsed laser deposition. The electrical properties and band alignment of ITO/n-Si(111) heterojunction was investigated by current–voltage measurement and X-ray photoelectron spectroscopy, respectively. It was found that the different transport mechanisms presented in the linear region of the forward bias ln I–V, which was due to the different form of In2O3 at the interface of ITO/n-Si(111) heterojunction. According to XPS measurement, the valence band offsets at the interface were calculated to be −2.5 ± 0.15 eV, which is the type II band alignments.
Journal of Materials Science: Materials in Electronics – Springer Journals
Published: May 18, 2017
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