The structure of (In,Ga,Al)As/GaAs stacks with one to three layers of self-assembled InAs quantum dots is studied by high-resolution x-ray diffractometry and x-ray reflectometry. It is shown that the quantum dots are almost pyramidal in shape. It is found that (i) a first InAs layer, 2.7 ML thick, is invariably produced with a faceted surface and (ii) vertical coupling of quantum dots and superlattice formation do occur (with three quantum-dot layers). It is demonstrated that combining the two methods provides researchers with more reliable structural data.
Russian Microelectronics – Springer Journals
Published: Oct 18, 2004
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