A semianalytical model of a field-effect ballistic nanotransistor with an ultrathin channel, which is used to describe transistors with both single and double gates, is suggested. The potential distributions and the electron concentrations in the transistor channel are calculated in terms of this model. The afterthreshold and subthreshold volt-ampere characteristics are plotted. A comparison with a more correct numerical model is given.
Russian Microelectronics – Springer Journals
Published: Nov 15, 2009
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