A semianalytical model of a nanowire-based field-effect transistor

A semianalytical model of a nanowire-based field-effect transistor A semianalytical model of a field-effect ballistic nanotransistor with a nanowire-based or nano- tube-based channel, which is applicable to describe transistors with various gate configurations, is proposed. Based on this model, the calculations of the distribution of the potential and electron concentration in a transistor channel are determined and its current-voltage characteristics are plotted. Considerable distinctions regarding the computation of short-channel transistors based on the local model and good agreement with the computations performed according to the rigorous models are revealed. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

A semianalytical model of a nanowire-based field-effect transistor

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Publisher
Springer Journals
Copyright
Copyright © 2014 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739713060061
Publisher site
See Article on Publisher Site

Abstract

A semianalytical model of a field-effect ballistic nanotransistor with a nanowire-based or nano- tube-based channel, which is applicable to describe transistors with various gate configurations, is proposed. Based on this model, the calculations of the distribution of the potential and electron concentration in a transistor channel are determined and its current-voltage characteristics are plotted. Considerable distinctions regarding the computation of short-channel transistors based on the local model and good agreement with the computations performed according to the rigorous models are revealed.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jan 30, 2014

References

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