In this paper, we propose a novel high channel density LDMOS transistor (HCD-LDMOS) with low specific on-resistance and high transconductance. This is achieved primarily through increased channel density to improve transistor performance via the creation of a U-shaped structure. The channel density is significantly increased when one extra etching process is added to create the U-shaped structure, resulting in a 68.42% reduction in specific on-resistance compared with a conventional structure (C-LDMOS). In addition, the gate control over the channel of the HCD-LDMOS is improved, and a marked increase in the peak transconductance value is achieved. Another key advantage is the lower electron temperature relative to the C-LDMOS. Using the U-shaped formation of the HCD-LDMOS structure, increases the uniformity of the electric field. This smoothing effect leads to a reduction in electron temperature and greater device reliability. The only difference between the C-LDMOS and the proposed structure is the addition of one extra etching process.
Journal of Computational Electronics – Springer Journals
Published: Sep 15, 2017
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