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Seung-Hun Oh, J. Kim, Chang-Seok Kim, Chang Sunghwan, Sang-Mae Lee, M. Jeong (2011)
The fabrication of three-dimensional nano-structures by defocused electron beam energyMicroelectronic Engineering, 88
AK Pikaev (1987)
Sovremennaya radiatsionnaya khimiya. Tverdoe telo i polimery. Prikladnye aspekty
A. Schleunitz, V. Guzenko, A. Schander, M. Vogler, H. Schift (2011)
Selective profile transformation of electron-beam exposed multilevel resist structures based on a molecular weight dependent thermal reflowJournal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 29
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Direct Etching of Resists by UV LightJapanese Journal of Applied Physics, 20
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MA Bruk, MV Kondrat’eva, AA Baranov (1999)
Radiation depolymerization of poly(methyl methacrylate) adsorbed on silochromeVysokomol. Soedin., 41A
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Fabrication of 3 D pat tern with vertical and sloped sidewalls by grayscale elec tron beam lithography and thermal annealing, Micro electron
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Deep UV Ablation of PMMA ResistsJapanese Journal of Applied Physics, 22
R. Murali (2007)
Metrology for Grayscale Lithography, 931
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Effects of molecular properties on nanolithography in PMMA
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Radiation depolymerization of poly(methyl methacry late) adsorbed on silochrome, Vysokomol
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Sovremennaya radiatsionnaya khimiya. Tverdoe telo i polimery. Prikladnye aspekty (Modern Radiation Chemistry
A Schleunitz, H Schift (2011)
Fabrication of 3-D pattern with vertical and sloped sidewalls by grayscale electron-beam lithography and thermal annealingMicroelectron. Eng., 88
S. Matsui (1989)
Electron beam lithography using surface reactions with ClF3Applied Physics Letters, 55
(1985)
Photoetching of polymers in conditions of the chain depolymerization of macromolecules
A new method of dry electron-beam etching of some positive resists directly during exposure is proposed. It is shown that exposure of the PMMA resist (the layer 80–85 nm thick on the Si wafer) by electrons with energy of 15–20 keV in vacuum at temperatures of 115–170°C (above the glass-transition temperature of the PMMA) leads to the effective etching of the resist at relatively low exposure doses by a factor of 10–100 smaller than the exposure doses of this resist in the conventional “wet” lithography. It is assumed that the direct etching proceeds by the mechanism of the radical-chain depolymerization of the PMMA resist to a monomer. The high efficiency of the suggested method for the formation of spatial 3D structures in the PMMA resist is shown.
Russian Microelectronics – Springer Journals
Published: Sep 3, 2013
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