A new method of formation of the masking image (relief) directly during the electron-beam exposure of the resist

A new method of formation of the masking image (relief) directly during the electron-beam... A new method of dry electron-beam etching of some positive resists directly during exposure is proposed. It is shown that exposure of the PMMA resist (the layer 80–85 nm thick on the Si wafer) by electrons with energy of 15–20 keV in vacuum at temperatures of 115–170°C (above the glass-transition temperature of the PMMA) leads to the effective etching of the resist at relatively low exposure doses by a factor of 10–100 smaller than the exposure doses of this resist in the conventional “wet” lithography. It is assumed that the direct etching proceeds by the mechanism of the radical-chain depolymerization of the PMMA resist to a monomer. The high efficiency of the suggested method for the formation of spatial 3D structures in the PMMA resist is shown. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

A new method of formation of the masking image (relief) directly during the electron-beam exposure of the resist

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Springer US
Copyright © 2013 by Pleiades Publishing, Ltd.
Engineering; Electrical Engineering
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