A new guard ring for radiation induced noise reduction in photodiodes implemented in 0.18μm CMOS technology

A new guard ring for radiation induced noise reduction in photodiodes implemented in 0.18μm CMOS... A new p-type guard ring by introduction of a thin p-type layer which encloses shallow trench isolation (STI) layer is utilized to reduce radiation induced noise in photodiodes implemented in 0.18  $$\upmu$$ μ m standard complementary-metal-oxide-semiconductor (CMOS) technology. The guard ring efficiency is characterized according to a new radiation model developed for p–n photodiodes implemented in the same technology. The extracted model which is the oxide trapped charges and interface state values is verified using a simulation setup for two different structures. The optimized guard ring with the doping concentration of $$10^{+19}$$ 10 + 19  atoms cm $$^{-3}$$ - 3 reduces the dark current of photodiodes at 1 Mrad dose of ionizing radiation from $$6.97\,\times \,10^{-13}$$ 6.97 × 10 - 13  A (without the guard ring) to $$1.29\,\times \,10^{-14}$$ 1.29 × 10 - 14  A for STI in contact with the active region structure and from $$5.95\,\times \,10^{-13}$$ 5.95 × 10 - 13  A (without the guard ring) to $$2\,\times \,10^{-14}$$ 2 × 10 - 14  A for STI surrounded p-well structure. The proposed guard ring can be used as a promising structure for ionizing radiation hardening of photodiodes. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Optical and Quantum Electronics Springer Journals

A new guard ring for radiation induced noise reduction in photodiodes implemented in 0.18μm CMOS technology

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Publisher
Springer US
Copyright
Copyright © 2017 by Springer Science+Business Media, LLC
Subject
Physics; Optics, Lasers, Photonics, Optical Devices; Electrical Engineering; Characterization and Evaluation of Materials; Computer Communication Networks
ISSN
0306-8919
eISSN
1572-817X
D.O.I.
10.1007/s11082-017-1125-1
Publisher site
See Article on Publisher Site

Abstract

A new p-type guard ring by introduction of a thin p-type layer which encloses shallow trench isolation (STI) layer is utilized to reduce radiation induced noise in photodiodes implemented in 0.18  $$\upmu$$ μ m standard complementary-metal-oxide-semiconductor (CMOS) technology. The guard ring efficiency is characterized according to a new radiation model developed for p–n photodiodes implemented in the same technology. The extracted model which is the oxide trapped charges and interface state values is verified using a simulation setup for two different structures. The optimized guard ring with the doping concentration of $$10^{+19}$$ 10 + 19  atoms cm $$^{-3}$$ - 3 reduces the dark current of photodiodes at 1 Mrad dose of ionizing radiation from $$6.97\,\times \,10^{-13}$$ 6.97 × 10 - 13  A (without the guard ring) to $$1.29\,\times \,10^{-14}$$ 1.29 × 10 - 14  A for STI in contact with the active region structure and from $$5.95\,\times \,10^{-13}$$ 5.95 × 10 - 13  A (without the guard ring) to $$2\,\times \,10^{-14}$$ 2 × 10 - 14  A for STI surrounded p-well structure. The proposed guard ring can be used as a promising structure for ionizing radiation hardening of photodiodes.

Journal

Optical and Quantum ElectronicsSpringer Journals

Published: Aug 9, 2017

References

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