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A new p-type guard ring by introduction of a thin p-type layer which encloses shallow trench isolation (STI) layer is utilized to reduce radiation induced noise in photodiodes implemented in 0.18 $$\upmu$$ μ m standard complementary-metal-oxide-semiconductor (CMOS) technology. The guard ring efficiency is characterized according to a new radiation model developed for p–n photodiodes implemented in the same technology. The extracted model which is the oxide trapped charges and interface state values is verified using a simulation setup for two different structures. The optimized guard ring with the doping concentration of $$10^{+19}$$ 10 + 19 atoms cm $$^{-3}$$ - 3 reduces the dark current of photodiodes at 1 Mrad dose of ionizing radiation from $$6.97\,\times \,10^{-13}$$ 6.97 × 10 - 13 A (without the guard ring) to $$1.29\,\times \,10^{-14}$$ 1.29 × 10 - 14 A for STI in contact with the active region structure and from $$5.95\,\times \,10^{-13}$$ 5.95 × 10 - 13 A (without the guard ring) to $$2\,\times \,10^{-14}$$ 2 × 10 - 14 A for STI surrounded p-well structure. The proposed guard ring can be used as a promising structure for ionizing radiation hardening of photodiodes.
Optical and Quantum Electronics – Springer Journals
Published: Aug 9, 2017
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