A new direction in the creation of ceramic materials with a specified phase composition and structure. part ii. theoretical foundations of low-temperature synthesis of sic from gels and practical realization of this process in the technology of ceramics and refractories 1. Physicochemical foundations of low-temperature synthesis of sic in heat treatment of gels

A new direction in the creation of ceramic materials with a specified phase composition and... Results of a thermodynamic study of 108 phase diagrams of the system Si — O2 — C plotted in the coordinatesRT lnp Q2 —T are presented. Conditions of the gas medium that intensify SiC synthesis are established. According to the phase diagrams of Si — O2 — C, carbide formation can start at 700 K. The presence of a minimum amount of SiO vapor at a ratio $$p_{CO} /P_{CO_2 } = 9$$ : 1 is the most favorable condition for synthesizing SiC from silica and carbon. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Refractories and Industrial Ceramics Springer Journals

A new direction in the creation of ceramic materials with a specified phase composition and structure. part ii. theoretical foundations of low-temperature synthesis of sic from gels and practical realization of this process in the technology of ceramics and refractories 1. Physicochemical foundations of low-temperature synthesis of sic in heat treatment of gels

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Publisher
Springer US
Copyright
Copyright © 2000 by Kluwer Academic/Plenum Publishers
Subject
Chemistry; Characterization and Evaluation of Materials; Materials Science; Ceramics, Glass, Composites, Natural Methods
ISSN
1083-4877
eISSN
1573-9139
D.O.I.
10.1007/BF02764196
Publisher site
See Article on Publisher Site

Abstract

Results of a thermodynamic study of 108 phase diagrams of the system Si — O2 — C plotted in the coordinatesRT lnp Q2 —T are presented. Conditions of the gas medium that intensify SiC synthesis are established. According to the phase diagrams of Si — O2 — C, carbide formation can start at 700 K. The presence of a minimum amount of SiO vapor at a ratio $$p_{CO} /P_{CO_2 } = 9$$ : 1 is the most favorable condition for synthesizing SiC from silica and carbon.

Journal

Refractories and Industrial CeramicsSpringer Journals

Published: Nov 22, 2007

References

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