A generalized theory of charge transport in low-barrier Mott diodes with near-surface δ-doping: Comparison with experimental data

A generalized theory of charge transport in low-barrier Mott diodes with near-surface δ-doping:... An analytical generalized model for the charge transport in low-barrier Mott detector diodes with near-surface δ-doping is formulated. The model takes into account the inhomogeneous distribution of the electric field in the base region affecting the temperature- and field-assisted tunneling across the near-surface barrier. The calculated values of the current agree well with the experimental data at nearly zero bias voltage, that is, in the voltage range especially important for the low-barrier detectors. The analytical approach allows us to calculate characteristic nonlinearities of the detectors and to solve inverse problems arising in the diagnostics of structural parameters for semiconductor materials used in these detectors. For forward bias voltages comparable to the effective barrier height, it was shown that the effects of quantum statistics play a significant role for the potential relief within the base layer and for current-voltage curves. At the reverse bias voltage, it is necessary to take into account an additional tunneling channel, namely, the electron tunneling across the footing of the near-surface potential barrier. Taking these effects into account in the numerical simulations provides good agreement with the experimental data within the whole voltage range and confirms the reliability of our model in the description of electron transport in low-barrier Mott detector diodes. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

A generalized theory of charge transport in low-barrier Mott diodes with near-surface δ-doping: Comparison with experimental data

Loading next page...
 
/lp/springer_journal/a-generalized-theory-of-charge-transport-in-low-barrier-mott-diodes-SdZaqbyD5l
Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2010 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739710050045
Publisher site
See Article on Publisher Site

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 12 million articles from more than
10,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Unlimited reading

Read as many articles as you need. Full articles with original layout, charts and figures. Read online, from anywhere.

Stay up to date

Keep up with your field with Personalized Recommendations and Follow Journals to get automatic updates.

Organize your research

It’s easy to organize your research with our built-in tools.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

Monthly Plan

  • Read unlimited articles
  • Personalized recommendations
  • No expiration
  • Print 20 pages per month
  • 20% off on PDF purchases
  • Organize your research
  • Get updates on your journals and topic searches

$49/month

Start Free Trial

14-day Free Trial

Best Deal — 39% off

Annual Plan

  • All the features of the Professional Plan, but for 39% off!
  • Billed annually
  • No expiration
  • For the normal price of 10 articles elsewhere, you get one full year of unlimited access to articles.

$588

$360/year

billed annually
Start Free Trial

14-day Free Trial