A generalized theory of charge transport in low-barrier Mott diodes with near-surface δ-doping: Comparison with experimental data

A generalized theory of charge transport in low-barrier Mott diodes with near-surface δ-doping:... An analytical generalized model for the charge transport in low-barrier Mott detector diodes with near-surface δ-doping is formulated. The model takes into account the inhomogeneous distribution of the electric field in the base region affecting the temperature- and field-assisted tunneling across the near-surface barrier. The calculated values of the current agree well with the experimental data at nearly zero bias voltage, that is, in the voltage range especially important for the low-barrier detectors. The analytical approach allows us to calculate characteristic nonlinearities of the detectors and to solve inverse problems arising in the diagnostics of structural parameters for semiconductor materials used in these detectors. For forward bias voltages comparable to the effective barrier height, it was shown that the effects of quantum statistics play a significant role for the potential relief within the base layer and for current-voltage curves. At the reverse bias voltage, it is necessary to take into account an additional tunneling channel, namely, the electron tunneling across the footing of the near-surface potential barrier. Taking these effects into account in the numerical simulations provides good agreement with the experimental data within the whole voltage range and confirms the reliability of our model in the description of electron transport in low-barrier Mott detector diodes. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

A generalized theory of charge transport in low-barrier Mott diodes with near-surface δ-doping: Comparison with experimental data

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Publisher
Springer Journals
Copyright
Copyright © 2010 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739710050045
Publisher site
See Article on Publisher Site

Abstract

An analytical generalized model for the charge transport in low-barrier Mott detector diodes with near-surface δ-doping is formulated. The model takes into account the inhomogeneous distribution of the electric field in the base region affecting the temperature- and field-assisted tunneling across the near-surface barrier. The calculated values of the current agree well with the experimental data at nearly zero bias voltage, that is, in the voltage range especially important for the low-barrier detectors. The analytical approach allows us to calculate characteristic nonlinearities of the detectors and to solve inverse problems arising in the diagnostics of structural parameters for semiconductor materials used in these detectors. For forward bias voltages comparable to the effective barrier height, it was shown that the effects of quantum statistics play a significant role for the potential relief within the base layer and for current-voltage curves. At the reverse bias voltage, it is necessary to take into account an additional tunneling channel, namely, the electron tunneling across the footing of the near-surface potential barrier. Taking these effects into account in the numerical simulations provides good agreement with the experimental data within the whole voltage range and confirms the reliability of our model in the description of electron transport in low-barrier Mott detector diodes.

Journal

Russian MicroelectronicsSpringer Journals

Published: Sep 24, 2010

References

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