An analytical generalized model for the charge transport in low-barrier Mott detector diodes with near-surface δ-doping is formulated. The model takes into account the inhomogeneous distribution of the electric field in the base region affecting the temperature- and field-assisted tunneling across the near-surface barrier. The calculated values of the current agree well with the experimental data at nearly zero bias voltage, that is, in the voltage range especially important for the low-barrier detectors. The analytical approach allows us to calculate characteristic nonlinearities of the detectors and to solve inverse problems arising in the diagnostics of structural parameters for semiconductor materials used in these detectors. For forward bias voltages comparable to the effective barrier height, it was shown that the effects of quantum statistics play a significant role for the potential relief within the base layer and for current-voltage curves. At the reverse bias voltage, it is necessary to take into account an additional tunneling channel, namely, the electron tunneling across the footing of the near-surface potential barrier. Taking these effects into account in the numerical simulations provides good agreement with the experimental data within the whole voltage range and confirms the reliability of our model in the description of electron transport in low-barrier Mott detector diodes.
Russian Microelectronics – Springer Journals
Published: Sep 24, 2010
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