3D analytical modeling of surface potential, threshold voltage, and subthreshold swing in dual-material-gate (DMG) SOI FinFETs

3D analytical modeling of surface potential, threshold voltage, and subthreshold swing in... Here, we develop a 3D analytical model for potential in a lightly doped dual-material-gate FinFET in the subthreshold region. The model is based on the perimeter-weighted sum of a dual-material double-gate (DMDG) asymmetric MOSFET and a DMDG symmetric MOSFET. The potential model is used to determine the minimum surface potential needed to obtain the threshold voltage $$(V_{\mathrm{T}})$$ ( V T ) and subthreshold swing (SS) by considering the source barrier changes in the leakiest channel path. The proposed model is capable of reducing the drain-induced barrier lowering (DIBL) as well as the hot carrier effects offered by this device. The impact of control gate ratio and work function difference between the two metal gates on $$V_{\mathrm{T}}$$ V T and SS are also correctly established by the model. All model derivations are validated by comparing the results with technology computer-aided design (TCAD) simulation data. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Computational Electronics Springer Journals

3D analytical modeling of surface potential, threshold voltage, and subthreshold swing in dual-material-gate (DMG) SOI FinFETs

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Publisher
Springer Journals
Copyright
Copyright © 2017 by Springer Science+Business Media, LLC
Subject
Engineering; Mathematical and Computational Engineering; Electrical Engineering; Theoretical, Mathematical and Computational Physics; Optical and Electronic Materials; Mechanical Engineering
ISSN
1569-8025
eISSN
1572-8137
D.O.I.
10.1007/s10825-017-1072-x
Publisher site
See Article on Publisher Site

Abstract

Here, we develop a 3D analytical model for potential in a lightly doped dual-material-gate FinFET in the subthreshold region. The model is based on the perimeter-weighted sum of a dual-material double-gate (DMDG) asymmetric MOSFET and a DMDG symmetric MOSFET. The potential model is used to determine the minimum surface potential needed to obtain the threshold voltage $$(V_{\mathrm{T}})$$ ( V T ) and subthreshold swing (SS) by considering the source barrier changes in the leakiest channel path. The proposed model is capable of reducing the drain-induced barrier lowering (DIBL) as well as the hot carrier effects offered by this device. The impact of control gate ratio and work function difference between the two metal gates on $$V_{\mathrm{T}}$$ V T and SS are also correctly established by the model. All model derivations are validated by comparing the results with technology computer-aided design (TCAD) simulation data.

Journal

Journal of Computational ElectronicsSpringer Journals

Published: Oct 11, 2017

References

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