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A. Rogalski (2003)
Infrared detectors: status and trendsProgress in Quantum Electronics, 27
T. Shiraishi, H. Yagi, K. Endo, M. Kimata, T. Ozeki, K. Kama, Toshiki Seto (1996)
PtSi FPA with improved CSD operation, 2744
(2002)
Threshold characteristics of Pt-p-Si Schottkybarrier IR photodetectors with high-alloy surface layer, Mater. XVII mezhd. nauch.-tekhn. konf. po fotoelektronike i priboram nochnogo videniya
(1990)
640*480 element PtSi IR sensor with low-noise MOS XY addressable multiplexer
R.-N. Yen (1998)
High performance 256–244 PtSi Schottky-barrier IRCCD imagerSPIE, 3377
(1998)
High performance 256–244
A.V. Voitsekhovskii, A.P. Kokhanenko, S.N. Nesmelov (2002)
Mater. XVII mezhd. nauch.-tekhn. konf. po fotoelektronike i priboram nochnogo videniya (Proc. 17th Int. Sci.- Tech. Conf. on Photoelectronics and Night Vision Devices), Moscow
The results of research and development of a 320 × 240 platinum silicide focal plane array (FPA) for the spectral range of 3–5 μm are presented. The development is based entirely on CMOS technology. It is shown that the FPA makes it possible to adjust the photosignal accumulation time at a fixed frame rate and subtract the background constant component in the output device.
Russian Microelectronics – Springer Journals
Published: Feb 16, 2017
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