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- Publisher
- Springer Journals
- Copyright
- Copyright
- Subject
- Physics; Condensed Matter Physics; Characterization and Evaluation of Materials; Magnetism, Magnetic Materials
- ISSN
- 0022-2291
- eISSN
- 1573-7357
- DOI
- 10.1007/BF00115501
- Publisher site
- See Article on Publisher Site
Abstract
Channeling and x-ray diffraction measurements on Kr- and He-irradiated V3Si single crystals and films reveal different damage levels for fluences in cases where the superconducting transition temperature T chas been reduced by the same amount. This indicates that only special defect structures are responsible for the T c-reduction mechanism. In the fluence region where T cis decreasing, T ccorrelates with residual resistivity ϱo, independent of the kind of irradiation. However, at particle fluences where T csaturation occurs, different saturation values of ϱo are observed. The exponential decrease and the saturation of T cwith fluence are explained by a similar behavior of g9o versus fluence in the damage production and saturation processes. The increase of the lattice parameter is not uniquely dependent on the decrease of T c, but also on the amount of damage present.
Journal
Journal of Low Temperature Physics – Springer Journals
Published: May 14, 2004