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A. Adams, C. Capio (1979)
The Deposition of Silicon Dioxide Films at Reduced PressureJournal of The Electrochemical Society, 126
T. Kawahara, Akimasa Yuuki, Yasuji Matsui (1992)
Reaction Mechanism of Chemical Vapor Deposition Using Tetraethylorthosilicate and Ozone at Atmospheric PressureJapanese Journal of Applied Physics, 31
Y. Guketlev (1991)
Lazernaya tekhnologiya integral'nykh skhem
N.V. Rumak (1991)
Komponenty MOP-integral'nykh mikroskhem
Y. Varzarev, V.V. Polyakov (1995)
Sbornik nauchnykh trudov molodykh uchenykh
P.S. Agalarzade (1978)
Osnovy konstruirovaniya i tekhnologii obrabotki poverkhnosti p-n perekhoda
I.P. Alekhin (1992)
Radiation-Induced Phenomena in IC Active Layers and ComponentsElektron. Prom-st., 3
Silicon dioxide films were obtained by TEOS photochemical decomposition. The specially designed setup is described. A possible decomposition mechanism in the vapor phase is outlined. The suggested kinetic model of SiO2 photochemical deposition from the TEOS–oxygen vapor phase fits experimental data for temperatures between 300 and 450°C.
Russian Microelectronics – Springer Journals
Published: Oct 10, 2004
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