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The Formation of Silicon Dioxide Films by TEOS Photochemical Decomposition

The Formation of Silicon Dioxide Films by TEOS Photochemical Decomposition Silicon dioxide films were obtained by TEOS photochemical decomposition. The specially designed setup is described. A possible decomposition mechanism in the vapor phase is outlined. The suggested kinetic model of SiO2 photochemical deposition from the TEOS–oxygen vapor phase fits experimental data for temperatures between 300 and 450°C. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

The Formation of Silicon Dioxide Films by TEOS Photochemical Decomposition

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References (7)

Publisher
Springer Journals
Copyright
Copyright © 2001 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
DOI
10.1023/A:1009413623325
Publisher site
See Article on Publisher Site

Abstract

Silicon dioxide films were obtained by TEOS photochemical decomposition. The specially designed setup is described. A possible decomposition mechanism in the vapor phase is outlined. The suggested kinetic model of SiO2 photochemical deposition from the TEOS–oxygen vapor phase fits experimental data for temperatures between 300 and 450°C.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 10, 2004

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