The theory of spin-independent scattering from surface irregularities is used to calculate the magnetoresistance ratio of conduction-in-plane magnetic multilayers. It is demonstrated that this form of scattering can be the main factor in giant magnetoresistance (GMR), due to nonlinear variation of conductance with thickness for the current channel. Formulae for the magnetoresistance ratio are derived that include the thicknesses of the magnetic layers and the nonmagnetic one. Magnetoresistance values so obtained are shown to be in agreement with previously measured ones. Producing appropriate types of surface roughness and using magnetic semiconductors in the form of quantum wells are identified as promising ways to enhance GMR.
Russian Microelectronics – Springer Journals
Published: Nov 21, 2006
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