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Self-consistent calculation of Landau levels of a quasi-two-dimensional hole gas at a GaAs/AlGaAs p -type heterojunction

Self-consistent calculation of Landau levels of a quasi-two-dimensional hole gas at a GaAs/AlGaAs... An efficient method is proposed for the self-consistent calculation of Landau levels of a quasi-two-dimensional hole gas at a GaAs/AlGaAs heterostructure in a perpendicular magnetic field. The method is based on transforming the Schroedinger and Poisson equations to a system of nonlinear differential equations which are then spatially discretized and solved by the method of relaxation. The method proposed is used to model the optical spectra for recombination of the quasi-two-dimensional hole gas with electrons localized at a dlayer of donors in an isolated p -type heterojunction. Particular attention is paid to effects associated with the dependence of the wave functions and shape of the potential well on the magnetic field, which have not been considered before. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physics of the Solid State Springer Journals

Self-consistent calculation of Landau levels of a quasi-two-dimensional hole gas at a GaAs/AlGaAs p -type heterojunction

Volkov, O.
Physics of the Solid State , Volume 40 (6) – Jun 1, 1998
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References (11)

Publisher
Springer Journals
Copyright
Copyright © 1998 by American Institute of Physics
Subject
Physics; Solid State Physics and Spectroscopy
ISSN
1063-7834
eISSN
1090-6460
DOI
10.1134/1.1130479
Publisher site
See Article on Publisher Site

Abstract

An efficient method is proposed for the self-consistent calculation of Landau levels of a quasi-two-dimensional hole gas at a GaAs/AlGaAs heterostructure in a perpendicular magnetic field. The method is based on transforming the Schroedinger and Poisson equations to a system of nonlinear differential equations which are then spatially discretized and solved by the method of relaxation. The method proposed is used to model the optical spectra for recombination of the quasi-two-dimensional hole gas with electrons localized at a dlayer of donors in an isolated p -type heterojunction. Particular attention is paid to effects associated with the dependence of the wave functions and shape of the potential well on the magnetic field, which have not been considered before.

Journal

Physics of the Solid State – Springer Journals

Published: Jun 1, 1998

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